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Threshold transport of high‐mobility two‐dimensional electron gas in GaAs/AlGaAs heterostructures
National licenceAmerican Institute of Physics | 1988| -
Phase formation in a Bi‐Sr‐Ca‐Cu oxide superconductor
National licenceAmerican Institute of Physics | 1988| -
Growth of low‐density two‐dimensional electron system with very high mobility by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1988| -
Microstructure of Pb‐modified Bi‐Ca‐Sr‐Cu‐O superconductor
National licenceAmerican Institute of Physics | 1988| -
Further evidence for the presence of c=38.2 A˚ phase in a Bi‐Ca‐Sr‐Cu‐O superconductor
National licenceAmerican Institute of Physics | 1988| -
Preparation of a single‐phase (Bi0.9Pb0.1)2Sr2Ca2Cu3Oy ceramic superconductor
National licenceAmerican Institute of Physics | 1989| -
High‐speed 1.3‐μm InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine
National licenceAmerican Institute of Physics | 1992| -
Superconductivity related to indium‐diffused GaAs
National licenceAmerican Institute of Physics | 1992| -
Study of characteristics of photoluminescence spectra in double‐barrier resonant tunneling structures
National licenceAmerican Institute of Physics | 1993| -
Molecular beam epitaxy growth of InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
American Institute of Physics | 1997| -
Spatially resolved observation of Coulomb blockade and negative differential conductance on a Ag cluster on the clean GaAs(110) surface
National licenceAmerican Institute of Physics | 1999| -
Production of radioactive ion beams using the in-flight technique
National licenceAmerican Institute of Physics | 2000| -
Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors
National licenceAmerican Institute of Physics | 2001| -
Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
National licenceAmerican Institute of Physics | 2001| -
Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses
National licenceAmerican Institute of Physics | 2001| -
Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
National licenceAmerican Institute of Physics | 2001|
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