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Nitrogen Implantation to Improve Electron Channel Mobility in 4H-SiC MOSFET
Online Contents | 2008| -
Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives
British Library Online Contents | 2007| -
Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives
British Library Conference Proceedings | 2007| -
Improved electrical characterization of Al#8211Ti ohmic contacts on p-type ion implanted 6H-SiC
Online Contents | 2003| -
An enhanced approach to numerical modeling of heavily irradiated silicon devices
Online Contents | 2002| -
An enhanced approach to numerical modeling of heavily irradiated silicon devices
Online Contents | 2002| -
Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD
Free accessBASE | 2016| -
Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
British Library Online Contents | 2014| -
Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
British Library Conference Proceedings | 2014| -
P^+ Implanted 6H-SiC N^+-i-p Diodes: Evidence for a Post-implantation-annealing Dependent Defect Activation
British Library Conference Proceedings | 2014| -
Formula Not Shown Implanted 4H-SiC Formula Not Shown -i-n Diodes: Forward Current Negative Temperature Coefficient
British Library Online Contents | 2013| -
Modeling of radiation damage effects in silicon detectors at high fluences HL-LHC with Sentaurus TCAD
British Library Online Contents | 2016|
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