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The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants
Elsevier | 2014|Keywords: B2 Semiconducting III–V materials -
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation
Elsevier | 2017|Keywords: B2. Semiconducting III–V materials -
Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1−xN layers with medium Al content (x=0.4–0.6)
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
Growth temperature and surfactant effects on the properties of mixed group V alloys
Elsevier | 2015|Keywords: B2 Semiconducting III–V materials -
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits
Elsevier | 2017|Keywords: B2. Semiconducting III-V materials -
Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon
Elsevier | 2020|Keywords: B2. Semiconducting III–V materials -
Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells
Elsevier | 2010|Keywords: B2. Semiconducting III–V materials -
Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
Elsevier | 2010|Keywords: B2. Semiconducting III–V materials -
InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
Influence of thin MOCVD-grown GaN layer on underlying AlN template
Elsevier | 2019|Keywords: B2 Semiconducting III-V materials -
Initial stages of the growth of Al on GaN(0001)
Elsevier | 2010|Keywords: B2. Semiconducting III–V materials -
Optimization of InGaP metamorphic buffers grown by MOVPE
Elsevier | 2014|Keywords: B2. Semiconducting III–V materials -
Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface
Elsevier | 2019|Keywords: B2. Semiconducting III-V materials -
Heavily tellurium doped n-type InGaAs grown by MOCVD on 300mm Si wafers
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
Suppression of three-dimensional pit formation of InAs on GaSb(0 0 1) by Sb-free two-step molecular beam epitaxy
Elsevier | 2019|Keywords: B2. Semiconducting III–V materials -
InGaN-based solar cells with a tapered GaN structure
Elsevier | 2012|Keywords: B2. Semiconducting III–V materials -
Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures
Elsevier | 2017|Keywords: B2 Semiconducting III–V materials
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