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Identification of interfacial defects in high- gate stack films by spectroscopic ellipsometry
American Institute of Physics | 2009| -
Charge trapping defects in film stacks characterized by spectroscopic second-harmonic generation
American Institute of Physics | 2011| -
Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation
National licenceAmerican Institute of Physics | 2009| -
Spectroscopic analysis of the process-dependent microstructure of ultra-thin high-k gate dielectric film systems
British Library Online Contents | 2006| -
Identification of sub-band-gap absorption features at the HfO2/Si(100) interface via spectroscopic ellipsometry
National licenceAmerican Institute of Physics | 2007| -
Spectroscopic analysis of Al and N diffusion in HfO2
Free accessAmerican Institute of Physics | 2012| -
Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO~2 Interface During RTA Processing
British Library Conference Proceedings | 1999| -
Cost and Initial Performance Observations of CMP vs. Spin-Etch Processing for Removal of Copper Metalization from Patterned Low-k Materials
British Library Conference Proceedings | 2000| -
Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy
British Library Online Contents | 2005| -
Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
American Institute of Physics | 2007| -
Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature
British Library Online Contents | 2008| -
Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature
British Library Conference Proceedings | 2008| -
Identification of sub-band-gap absorption features at the HfO~2/Si(100) interface via spectroscopic ellipsometry (3 pages)
British Library Online Contents | 2007| -
Local structural phase determination of Ni silicide thin films using EXAFS
British Library Online Contents | 2012| -
Novel technique for contamination analysis around the edge, the bevel, and the edge exclusion area of 200- and 300-mm silicon wafers [5041-14]
British Library Conference Proceedings | 2003| -
Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
British Library Online Contents | 2007|
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