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Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy
Online Contents | 2009| -
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
Online Contents | 2008| -
Absolute determination of the asymmetry of the in-plane deformation of GaAs (001)
Online Contents | 2004| -
1BV.6.61 Characterization of InxGa1-xN/GaN MQWs Heterostructures for Solar Cell Applications
British Library Conference Proceedings | 2014| -
Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
National licenceAmerican Institute of Physics | 2004| -
Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
National licenceAmerican Institute of Physics | 2007| -
Self-assembled Ge nanocrystals on BaTiO3/SrTiO3/Si(001)
National licenceAmerican Institute of Physics | 2008| -
Plasticity of GaAs(011) at room temperature under concentrated load
Taylor & Francis Verlag | 2001| -
Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma
British Library Online Contents | 2018| -
Absolute determination of the asymmetry of the in-plane deformation of GaAs (001)
National licenceAmerican Institute of Physics | 2004| -
Sidewall passivation assisted by a silicon coverplate during and HBr inductively coupled plasma etching of InP for photonic devices
American Institute of Physics | 2008|
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