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The initial value problem for neutron transport in a slab with perfect reflection boundary conditions
National licenceElsevier | 1970| -
Global solution of a nonlinear neutron transport problem with temperature feedback
National licenceElsevier | 1977| -
Neurologic signs in neonatal intraventricular hemorrhage: A correlation with real-time ultrasound
National licenceElsevier | 1981| -
Characterization of the interface states at A1-GaAs schottky barriers with a thin interface layer
National licenceElsevier | 1982| -
Analysis of the capacitance of CdS/CuInSe2 thin film heterojunctions
National licenceElsevier | 1984| -
Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As
National licenceElsevier | 1985| -
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
National licenceElsevier | 1985| -
Optical and thermal cross-section of interface states from photocapacitance measurements
National licenceElsevier | 1986| -
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
National licenceElsevier | 1986| -
Potassium nitrosodisulphonate (fremy's salt) as a new redox thermometric titrant
National licenceElsevier | 1987| -
Boron implantation influence on the backgating effect in GaAs MESFETs
National licenceElsevier | 1987| -
Time-dependent response of interface states determined by using differential isothermal transient spectroscopy
National licenceElsevier | 1987| -
A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials
National licenceElsevier | 1989| -
TEM techniques for two dimensional junction delineation in integrated circuits
National licenceElsevier | 1990| -
Influence of the surface treatments by multipolar plasma on the slow state tunnel kinetics at the In0.53Ga0.47As/Si3N4 interfaces
National licenceElsevier | 1991| -
Effects of surface plasma treatments in relation to electrical isolation in GaAs integrated circuits
National licenceElsevier | 1991| -
Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE
National licenceElsevier | 1992| -
An Improved Method for Detection of Words with Unusual Occurrence Frequency in Nucleotidic Sequences
National licenceElsevier | 1993| -
Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures
National licenceElsevier | 1993| -
Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysis
National licenceElsevier | 1993| -
Structural characterisation of nitrogen ion implantation into silicon for sensor technology
National licenceElsevier | 1993| -
Phase II study in patients (PTS) with metastatic breast cancer (MBC)
National licenceElsevier | 1993| -
Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements
National licenceElsevier | 1994| -
Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium
National licenceElsevier | 1994| -
Optical characterisation of SIMOX structures formed by successive implantation and annealing
National licenceElsevier | 1994| -
Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs
National licenceElsevier | 2002|
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