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Near‐equilibrium growth of thick, high quality beta‐SiC by sublimation
National licenceAmerican Institute of Physics | 1993| -
SiC surface orientation and Si loss rate effects on epitaxial graphene
Free accessSpringer Verlag | 2012| -
Ultrafast relaxation dynamics of hot optical phonons in graphene
National licenceAmerican Institute of Physics | 2010| -
Thermal stability of -alumina solid electrolyte under AMTEC operating conditions
American Institute of Physics | 2000| -
CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC
Online Contents | 2013|Contributors: Shields, Virgil B. -
075101 Molecular Adsorption Behavior of Epitaxial Graphene Grown on 6H-SiC Faces
Online Contents | 2010|Contributors: Shields, Virgil B -
Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)
Online Contents | 2010|Contributors: Shields, Virgil B.
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