Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD) (English)
- New search for: Hwang, Jeonghyun
- New search for: Shields, Virgil B.
- New search for: Thomas, Christopher I.
- New search for: Shivaraman, Shriram
- New search for: Hao, Dong
- New search for: Kim, Moonkyung
- New search for: Woll, Arthur R.
- New search for: Tompa, Gary S.
- New search for: Spencer, Michael G.
- New search for: Hwang, Jeonghyun
- New search for: Shields, Virgil B.
- New search for: Thomas, Christopher I.
- New search for: Shivaraman, Shriram
- New search for: Hao, Dong
- New search for: Kim, Moonkyung
- New search for: Woll, Arthur R.
- New search for: Tompa, Gary S.
- New search for: Spencer, Michael G.
In:
Journal of Crystal Growth
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312
, 21
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3219-3224
;
2010
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)
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Contributors:Hwang, Jeonghyun ( author ) / Shields, Virgil B. ( author ) / Thomas, Christopher I. ( author ) / Shivaraman, Shriram ( author ) / Hao, Dong ( author ) / Kim, Moonkyung ( author ) / Woll, Arthur R. ( author ) / Tompa, Gary S. ( author ) / Spencer, Michael G. ( author )
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Published in:Journal of Crystal Growth ; 312, 21 ; 3219-3224
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Publisher:
- New search for: Elsevier B.V.
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Publication date:2010-07-21
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Size:6 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 312, Issue 21
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3057
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AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environmentDimastrodonato, V. / Mereni, L.O. / Young, R.J. / Pelucchi, E. et al. | 2010
- 3063
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SIMS and Raman characterizations of ZnO:N thin films grown by MOCVDMarzouki, A. / Lusson, A. / Jomard, F. / Sayari, A. / Galtier, P. / Oueslati, M. / Sallet, V. et al. | 2010
- 3069
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Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal processLi, Xiaoqiang / Yang, Deren / Yu, Xuegong / Que, Duanlin et al. | 2010
- 3075
-
Synthesis and optical properties of Ce-doped ZnO hexagonal nanoplateletsMahmoud, Waleed E. et al. | 2010
- 3080
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Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4Bolkhovityanov, Yu.B. / Deryabin, A.S. / Gutakovskii, A.K. / Sokolov, L.V. et al. | 2010
- 3080
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Specific features of formation and propagation of 60 degrees and 90 degrees misfit dislocations in GexSi1-x/Si films with x greater-than 0.4Bolkhovityanov, Yu B. / Deryabin, A.S. / Gutakovskii, A.K. / Sokolov, L.V. et al. | 2010
- 3085
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Modulation of dendrite growth of cuprous oxide by electrodepositionWan, Lijuan / Wang, Zhiqiang / Yang, Zaisan / Luo, Wenjun / Li, Zhaosheng / Zou, Zhigang et al. | 2010
- 3091
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Impurity segregation in directional solidified multi-crystalline siliconBellmann, M.P. / Meese, E.A. / Arnberg, L. et al. | 2010
- 3096
-
Differences in nucleation and properties of InN islands formed using two different deposition proceduresLaboutin, Oleg / Johnson, Wayne / Welser, Roger et al. | 2010
- 3101
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GaP:Mg layers grown on GaN by MOCVDLi, Shuti / Su, Jun / Fan, Guanghan / Liu, Chao / Cao, Jianxing / Yin, Yian et al. | 2010
- 3105
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Metamorphic growth of tensile strained GaInP on GaAs substrateToikkanen, Lauri / Hakkarainen, Teemu / Schramm, Andreas / Tukiainen, Antti / Laukkanen, Pekka / Guina, Mircea et al. | 2010
- 3111
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Thermal-induced phase transition and assembly of hexagonal metastable In2O3 nanocrystals: A new approach to In2O3 functional materialsShu, Shiwen / Yu, Dabin / Wang, Yan / Wang, Feng / Wang, Zirong / Zhong, Wu et al. | 2010
- 3117
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Dense vertical nanoplates arrays and nanobelts of indium doped ZnO grown by thermal treatment of ZnS–In2O3 powdersAlemán, B. / Fernández, P. / Piqueras, J. et al. | 2010
- 3122
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Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layerSong, Hooyoung / Suh, Jooyoung / Kyu Kim, Eun / Hyeon Baik, Kwang / Hwang, Sung-Min et al. | 2010
- 3127
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Growth of polar axis oriented tetragonal Pb(Zr,Ti)O3 films on CaF2 substrates with transparent (La0.07Sr0.93)SnO3Utsugi, Satoru / Ehara, Yoshitaka / Tanaka, Hidenori / Yamada, Tomoaki / Funakubo, Hiroshi / Uchida, Hiroshi et al. | 2010
- 3131
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Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxyIida, Daisuke / Tamura, Kenta / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2010
- 3136
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Bridgman growth and site occupation in LuAG:Ce scintillator crystalsPetrosyan, A.G. / Ovanesyan, K.L. / Sargsyan, R.V. / Shirinyan, G.O. / Abler, D. / Auffray, E. / Lecoq, P. / Dujardin, C. / Pedrini, C. et al. | 2010
- 3143
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Approach for dislocation free GaN epitaxyHite, J.K. / Mastro, M.A. / Eddy, C.R. Jr. et al. | 2010
- 3147
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Tetragonal tungsten oxide nanobelts synthesized by chemical vapor depositionWu, Wei / Yu, Qingkai / Lian, Jie / Bao, Jiming / Liu, Zhihong / Pei, Shin-Shem et al. | 2010
- 3151
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Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVDSuresh, S. / Lourdudoss, S. / Landgren, G. / Baskar, K. et al. | 2010
- 3156
-
Growth and characterization of organic material 4-nitrobenzaldehyde single crystal using modified vertical Bridgman techniqueSuthan, T. / Rajesh, N.P. et al. | 2010
- 3161
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Solubility of GaN in supercritical ammonia with ammonium chloride as a mineralizerTomida, Daisuke / Kuroda, Kiyoshi / Hoshino, Naruhiro / Suzuki, Kousuke / Kagamitani, Yuji / Ishiguro, Toru / Fukuda, Tsuguo / Yokoyama, Chiaki et al. | 2010
- 3165
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Effects of pH and temperature on CaCO3 crystallization in aqueous solution with water soluble matrix of pearlsMa, Y.F. / Gao, Y.H. / Feng, Q.L. et al. | 2010
- 3171
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Unidirectional growth of l-asparagine monohydrate single crystal: First time observation of NLO nature and other studies of crystalline perfection, optical, mechanical and dielectric propertiesShakir, Mohd. / Riscob, B. / Maurya, K.K. / Ganesh, V. / Wahab, M.A. / Bhagavannarayana, G. et al. | 2010
- 3178
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Nucleation kinetics of selenium (+4) precipitation from an acidic copper sulphate solutionMangere, M. / Nathoo, J. / Lewis, A.E. et al. | 2010
- 3183
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Study of batch maltitol (4-O-α-d-glucopyranosyl-d-glucitol) crystallization by cooling and water evaporationGharsallaoui, Adem / Rogé, Barbara / Mathlouthi, Mohamed et al. | 2010
- 3191
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Microwave-assisted synthesis of spheroidal vaterite CaCO3 in ethylene glycol–water mixed solvents without surfactantsChen, Yinxia / Ji, Xianbing / Wang, Xiaobo et al. | 2010
- 3198
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Numerical study of induction heating in melt growth systems—Frequency selectionTavakoli, Mohammad Hossein / Karbaschi, Hossein / Samavat, Feridoun / Mohammadi-Manesh, Ebrahim et al. | 2010
- 3204
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Lu5Ir4Si10 whiskers: Morphology, crystal structure, superconducting and charge density wave transition studiesOpagiste, C. / Leroux, M. / Rodière, P. / Garbarino, G. / Pairis, S. / Bordet, P. / Lejay, P. et al. | 2010
- 3209
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Growth and optical properties of high-density InN nanodotsKe, W.C. / Lee, S.J. / Kao, C.Y. / Chen, W.K. / Chou, W.C. / Lee, M.C. / Chang, W.H. / Lin, W.J. / Cheng, Y.C. / Lee, T.C. et al. | 2010
- 3214
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Half opened microtubes of NaYF4:Yb,Er synthesized in reverse microemulsion under solvothermal conditionHuang, Yeju / You, Hongpeng / Song, Yanhua / Jia, Guang / Yang, Mei / Zheng, Yuhua / Zhang, Lihui / Liu, Kai et al. | 2010
- 3219
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Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)Hwang, Jeonghyun / Shields, Virgil B. / Thomas, Christopher I. / Shivaraman, Shriram / Hao, Dong / Kim, Moonkyung / Woll, Arthur R. / Tompa, Gary S. / Spencer, Michael G. et al. | 2010
- 3225
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Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic fieldKrauze, A. / Jēkabsons, N. / Muižnieks, A. / Sabanskis, A. / Lācis, U. et al. | 2010
- 3235
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Droplet epitaxy of zinc-blende GaN quantum dotsSchupp, T. / Meisch, T. / Neuschl, B. / Feneberg, M. / Thonke, K. / Lischka, K. / As, D.J. et al. | 2010
- 3238
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Molecular dynamics simulations of the crystal–melt interface mobility in HCP Mg and BCC FeGao, Y.F. / Yang, Y. / Sun, D.Y. / Asta, M. / Hoyt, J.J. et al. | 2010
- 3243
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Growth of (CH3)2NH2CuCl3 single crystals using evaporation method with different temperatures and solventsChen, L.M. / Tao, W. / Zhao, Z.Y. / Li, Q.J. / Ke, W.P. / Wang, X.M. / Liu, X.G. / Fan, C. / Sun, X.F. et al. | 2010
- 3247
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Optimizing dopant activation in Si:P double Formula Not ShownMcKibbin, S. R. / Clarke, W. R. / Fuhrer, A. / Simmons, M. Y. et al. | 2010
- 3247
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Optimizing dopant activation in Si:P doubleMcKibbin, Sarah R. / Clarke, Warrick R. / Fuhrer, Andreas / Simmons, Michelle Y. et al. | 2010
- 3247
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Optimizing dopant activation in Si:P doubleMcKibbin, Sarah R. et al. | 2010
- 3247
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Optimizing dopant activation in Si:P double delta-layersMcKibbin, Sarah R. / Clarke, Warrick R. / Fuhrer, Andreas / Simmons, Michelle Y. et al. | 2010
- 3251
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Impurity induced periodic mesostructures in Sb-doped SnO2 nanowiresKlamchuen, Annop / Yanagida, Takeshi / Kanai, Masaki / Nagashima, Kazuki / Oka, Keisuke / Kawai, Tomoji / Suzuki, Masaru / Hidaka, Yoshiki / Kai, Shoichi et al. | 2010
- IFC
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Editorial Board| 2010