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The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
British Library Online Contents | 2002| -
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
British Library Conference Proceedings | 2002| -
The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
British Library Conference Proceedings | 2009| -
The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
British Library Online Contents | 2009| -
The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
British Library Online Contents | 1998| -
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
British Library Online Contents | 2002| -
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
British Library Conference Proceedings | 2002| -
The Effect of Growth Conditions on Carrier Lifetime in n-Type 4H-SiC Epitaxial Layers
British Library Online Contents | 2012| -
The Effect of Growth Conditions on Carrier Lifetime in n-Type 4H-SiC Epitaxial Layers
British Library Conference Proceedings | 2012| -
The Configurational Change of a Metastable S-Cu Defect in Silicon
British Library Online Contents | 1994| -
The Configurational Change of a Metastable S-Cu Defect in Silicon
British Library Conference Proceedings | 1993| -
Temperature-Dependent Hall Effect Measurements in Low - Compensated p-Type 4H-SiC
British Library Online Contents | 2004|
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