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Electrostatic potential for a hyperbolic probe tip near a semiconductor
American Institute of Physics | 2003| -
Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization
Online Contents | 2012| -
Tunneling spectroscopy of graphene and related reconstructions on SiC(0001)
American Institute of Physics | 2009| -
2.1 Introduction to scanning tunneling microscopy of metals and semiconductor
Physics of Solid SurfacesLandolt-Börnstein / Springer Materials | 2015| -
Scanning tunneling microscopy and spectroscopy of gold on the GaAs(110) surface
American Institute of Physics | 1989| -
SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor
British Library Online Contents | 2013| -
Low-energy electron reflectivity from graphene: First-principles computations and approximate models
British Library Online Contents | 2013| -
2.2.6 Ir, Iridium
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015| -
2.3.12 InP, Indium Phosphide
Scanning tunneling microscopy of semiconductorLandolt-Börnstein / Springer Materials | 2015| -
2.3.9 GaSb, Gallium Antimonide
Scanning tunneling microscopy of semiconductorLandolt-Börnstein / Springer Materials | 2015| -
2.2.9 Pd, Palladium
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015| -
Low-energy Electron Reflectivity from Graphene: First-Principles Computations and Approximate Models
Free accessArXiv | 2012| -
2.3.5 CdSe, Cadmium Selenide, and CdS, Cadmium Sulfide
Scanning tunneling microscopy of semiconductorLandolt-Börnstein / Springer Materials | 2015| -
2.2.4 Cu, Copper
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015| -
2.3.8 GaP, Gallium Phosphide
Scanning tunneling microscopy of semiconductorLandolt-Börnstein / Springer Materials | 2015| -
2.2.8 Ni, Nickel
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015| -
2.2.2 Au, Gold
Scanning tunneling microscopy of metalsLandolt-Börnstein / Springer Materials | 2015| -
2.3.6 GaAs, Gallium Arsenide
Scanning tunneling microscopy of semiconductorLandolt-Börnstein / Springer Materials | 2015|
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