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Ellipsometric characterization of damage profiles using an advanced optical model
National licenceAmerican Institute of Physics | 2003| -
Damage accumulation in nitrogen implanted 6H‐SiC: Dependence on the direction of ion incidence and on the ion fluence
National licenceAmerican Institute of Physics | 2007| -
Ion mixing enhanced wafer bonding for silicon‐on‐insulator structures
National licenceAmerican Institute of Physics | 1992| -
Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
National licenceAmerican Institute of Physics | 2000| -
A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy
National licenceAmerican Institute of Physics | 2006|
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