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Effect of HIP Conditions on the Microstructure of a Near γ-TiAl+W Powder Alloy
National licenceTaylor & Francis Verlag | 1994| -
Broad-Band Modelling of Regional Seismograms: the Basin and Range Crustal Structure
Oxford University Press | 1996| -
Microstructural development of $ BaTiO_{3} $ powders synthesized by aqueous methods
Online Contents | 1996| -
Recombination of hydrogen and oxygen in the technical gaseous waste of nuclear power plants (I)
National licenceSpringer Verlag | 1996| -
Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch
National licenceAmerican Institute of Physics | 1997| -
Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments
National licenceAmerican Institute of Physics | 1998| -
Microstructural development of $ BaTiO_{3} $ heteroepitaxial thin films by hydrothermal synthesis
Online Contents | 1998| -
Recombination of hydrogen and oxygen in the technical gaseous waste of nuclear power plants
National licenceSpringer Verlag | 1998| -
1,3,3-Trimethylindoline-2-spiro-2'-3'-methyl-2'H-phenanthro[9,10-b][1,4]oxazine
National licenceIUCr | 1998| -
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
National licenceAmerican Institute of Physics | 1999| -
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
National licenceAmerican Institute of Physics | 1999| -
Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers
National licenceAmerican Institute of Physics | 1999| -
Directionally Solidified Ti-48Al-2Cr-2Nb Made By Power Down or Bridgeman Processing
Free accessDOAJ | 2000| -
Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
National licenceAmerican Institute of Physics | 2000| -
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
National licenceAmerican Institute of Physics | 2000| -
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
National licenceAmerican Institute of Physics | 2001| -
Near-unity below-band-gap absorption by microstructured silicon
National licenceAmerican Institute of Physics | 2001| -
Formation of metallofullerenes by laser ablation of externally doped fullerenes C60Mx (M=Sm, Pt and Ni)
National licenceSpringer Verlag | 2002| -
Primary creep behavior of Ti-48Al-2W as a function of stress and lamellar morphology
Springer Verlag | 2003| -
Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7−x capacitor
National licenceAmerican Institute of Physics | 2004| -
1.55 μm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror
National licenceAmerican Institute of Physics | 2004| -
Leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface with dead layer
National licenceAmerican Institute of Physics | 2005| -
Methods and Applications of Molecular Simulation in Catalyst Research
Taylor & Francis Verlag | 2006|
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