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Feature Papers in Electronic Materials Section
Catalogue medicine | 2022|Contributors: Roccaforte, Fabrizio -
Introduction to Gallium Nitride Properties and Applications
Wiley | 2020|Contributors: Roccaforte, Fabrizio -
Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model
American Institute of Physics | 2017| -
Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
American Institute of Physics | 2013| -
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHANNEL, AND MANUFACTURING METHOD THEREOF
Free accessEuropean Patent Office | 2022| -
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
Free accessEuropean Patent Office | 2023| -
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
Free accessEuropean Patent Office | 2021| -
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
Free accessEuropean Patent Office | 2020| -
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHANNEL, AND MANUFACTURING METHOD THEREOF
Free accessEuropean Patent Office | 2020| -
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
National licenceRoyal Society of Chemistry | 2014| -
NORMALLY-OFF HEMT TRANSISTOR WITH SELECTIVE GENERATION OF 2DEG CHANNEL, AND MANUFACTURING METHOD THEREOF
Free accessEuropean Patent Office | 2021|
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