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Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
National licenceElsevier | 1993| -
Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14%
American Chemical Society | 2021| -
Surface stoichiometry and interface formation during molecular‐beam epitaxy of strained InAs/AlxGa0.48−xIn0.52As heterostructures
American Institute of Physics | 1993| -
Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces
National licenceAmerican Institute of Physics | 1993| -
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates
American Institute of Physics | 2004| -
Tunable generation of nanometer-scale corrugations on high-index III-V semiconductor surfaces
National licenceAmerican Physical Society | 1994| -
Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon
American Institute of Physics | 2023| -
Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics
British Library Online Contents | 2018|
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