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Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
National licenceTaylor & Francis Verlag | 1989| -
Leakage mechanisms in GaN-on-GaN vertical pn diodes
Free accessAmerican Institute of Physics | 2018| -
Comment on: ‘‘Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors’’ [Appl. Phys. Lett. 61, 1691 (1992)]
Free accessAmerican Institute of Physics | 1993| -
On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress
National licenceAmerican Institute of Physics | 2012| -
Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2014| -
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
British Library Online Contents | 2012| -
Comment on: "Random telegraph signals arising from fast interface states in metal-SiO~2-Si transistors" [Appl. Phys. Lett. 61, 1691 (1992)]
British Library Online Contents | 1993| -
Capture and emission kinetics of individual Si:SiO2 interface states
National licenceAmerican Institute of Physics | 1986| -
DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT
British Library Online Contents | 2010| -
Measurements of Unity Gain Cutoff Frequency and Saturation Velocity of a GaN HEMT Transistor
British Library Online Contents | 2005| -
Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography
National licenceAmerican Institute of Physics | 2010| -
Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping
National licenceAmerican Institute of Physics | 2012| -
Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy
National licenceAmerican Institute of Physics | 2009| -
Conductance measurements on Pb centers at the (111) Si:SiO2 interface
National licenceAmerican Institute of Physics | 1996| -
1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
National licenceAmerican Institute of Physics | 1985|
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