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Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing
Elsevier | 2015|Keywords: B1. Nitrides -
Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes
Elsevier | 2014|Keywords: B1. Nitrides -
Feasibility of density and viscosity measurements under ammonothermal conditions
Elsevier | 2014|Keywords: B1. Nitrides -
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Elsevier | 2011|Keywords: B1. Nitrides -
Selective area growth of high quality GaN nanocolumns on Si(001) by plasma assisted molecular beam epitaxy
Elsevier | 2023|Keywords: B1. Nitrides -
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
Elsevier | 2015|Keywords: B1. Nitrides -
Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
Elsevier | 2018|Keywords: B1. Nitrides -
The effect of preliminary heat treatment on the durability of reaction bonded silicon nitride crucibles for solar cells applications
Elsevier | 2020|Keywords: B1. Nitrides -
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Elsevier | 2010|Keywords: B1. Nitrides -
Theoretical study on critical thicknesses of InGaN grown on (0001) GaN
Elsevier | 2011|Keywords: B1. Nitrides -
MBE fabrication of III-N-based laser diodes and its development to industrial system
Elsevier | 2013|Keywords: B1. Nitrides -
Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies
Elsevier | 2014|Keywords: B1. Nitrides -
Electron-carrier generation by edge dislocations in InN films: First-principles study
Elsevier | 2009|Keywords: B1. Nitrides -
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Elsevier | 2012|Keywords: B1. Nitrides -
Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers
Elsevier | 2014|Keywords: B1. Nitrides
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