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Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100)
Elsevier | 2020|Keywords: Post-oxidation annealing -
Improved 4H-SiC metal oxide semiconductor interface produced by using an oxidized SiN gate oxide that had undergone post-oxidation annealing
Online Contents | 2014|Keywords: Post-oxidation annealing -
The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface
National licenceTrans Tech Publications | 2013|Keywords: Post-Oxidation Annealing -
Compatibility of POCl3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs
National licenceTrans Tech Publications | 2020|Keywords: POCl3 Post Oxidation Annealing -
Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
National licenceTrans Tech Publications | 2010|Keywords: Post-Oxidation Annealing -
Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate
Elsevier | 2010|Keywords: Post-oxidation annealing -
Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
National licenceTrans Tech Publications | 2015|Keywords: Post Oxidation Annealing -
Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy
National licenceTrans Tech Publications | 2022|Keywords: Post-Oxidation Annealing -
Effects of post oxidation annealing on electrical and interface properties of high pressure water vapor oxidized SiO2/SiC metal-oxide-semiconductor capacitors
Elsevier | 2012|Keywords: Post oxidation annealing -
Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface
National licenceTrans Tech Publications | 2013|Keywords: Post-Oxidation Annealing -
The influence of oxygen ambient annealing conditions on the quality of Al/SiO2/n-type 4H-SiC MOS structure
Elsevier | 2011|Keywords: Post-oxidation annealing -
4H-SiC Power VDMOSFET Manufacturing Utilizing POCl3 Post Oxidation Annealing
National licenceTrans Tech Publications | 2020|Keywords: POCl3 Post Oxidation Annealing -
Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
Elsevier | 2020|Keywords: Post-oxidation annealing -
Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
National licenceTrans Tech Publications | 2020|Keywords: Post Oxidation Annealing -
Electrical and optical properties of nanostructured VOX thin films prepared by direct current magnetron reactive sputtering and post-annealing in oxygen
Elsevier | 2011|Keywords: Post-oxidation annealing -
Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS
Elsevier | 2004|Keywords: Post-oxidation annealing -
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
National licenceTrans Tech Publications | 2013|Keywords: Post-Oxidation Annealing -
Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures
National licenceTrans Tech Publications | 2016|Keywords: Post Oxidation Annealing (POA) -
Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
National licenceTrans Tech Publications | 2016|Keywords: Post Oxidation Annealing (POA) -
Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace
National licenceTrans Tech Publications | 2015|Keywords: Post Oxidation Annealing
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