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Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors
American Institute of Physics | 2016| -
Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors
American Institute of Physics | 2017| -
Self-Assembled Monolayer-Based Gate Dielectrics for MoS~2 FETs
British Library Conference Proceedings | 2016| -
Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate
American Institute of Physics | 2015| -
Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor
American Institute of Physics | 2015| -
Charge storage in nitrided nanocrystalline silicon dots
National licenceAmerican Institute of Physics | 2005| -
Graphene-based midinfrared photodetector with bull’s eye plasmonic antenna
Free accessSPIE | 2023| -
GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation
National licenceAmerican Institute of Physics | 2013| -
Transfer printing of Al~2O~3 gate dielectric for fabrication of top-gate MoS~2 FET
British Library Online Contents | 2019|
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