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Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl
American Chemical Society | 2018| -
Simulations of SiC CVD - Perspectives on the need for surface reaction model improvements
Free accessBASE | 2014| -
Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3
American Chemical Society | 2017| -
A Systematic Method for Predictive In Silico Chemical Vapor Deposition
American Chemical Society | 2020| -
Precursors for carbon doping of GaN in chemical vapor deposition
American Institute of Physics | 2015| -
Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon
Free accessBASE | 2016| -
Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species
American Chemical Society | 2018| -
A Systematic Method for Predictive in-silico Chemical Vapour Deposition
Free accessChemRxiv | 2019| -
Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC
Free accessBASE | 2014| -
A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride
National licenceRoyal Society of Chemistry | 2016| -
CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
Free accessBASE | 2019| -
Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
Tema Archive | 2014|
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