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Novel TEM methods for large-area analysis of misfit dislocation networks in semiconductor heterostructures
Taylor & Francis Verlag | 2006| -
Advantages of aberration correction for HRTEM investigation of complex layer compounds
Online Contents | 2010| -
Quantitative TEM analysis of 3-D grain structure in CVD-grown SiC films using double-wedge geometry
Online Contents | 2007| -
Novel TEM methods for large-area analysis of misfit dislocation networks in semiconductor heterostructures
British Library Online Contents | 2006| -
Morphology, interface polarity and branching of electrochemically etched pores in InP
Online Contents | 2005| -
Morphology, interface polarity and branching of electrochemically etched pores in InP
Online Contents | 2005| -
Determination of crystal polarity from bend contours in transmission electron microscope images
Online Contents | 2002| -
Determination of crystal polarity from bend contours in transmission electron microscope images
British Library Online Contents | 2002| -
On the identification of superdislocations in the γ′-phase of single-crystal Ni-base superalloys – An application of the LACBED method to complex microstructures
British Library Online Contents | 2015| -
Combining Atomistic Simulation and X-ray Diffraction for the Characterization of Nanostructures: A Case Study on Fivefold Twinned Nanowires
British Library Online Contents | 2014| -
On the identification of superdislocations in the γ′-phase of single-crystal Ni-base superalloys – An application of the LACBED method to complex microstructures
British Library Online Contents | 2015|
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