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The Structure of Cold Worked Gold I: A Study by Electron Diffraction
National licenceIOP Institute of Physics | 1955| -
Thin film abrasion tester
National licenceLABORATORY AND WORKSHOP NOTESIOP Institute of Physics | 1956| -
Electron bombardment apparatus for vacuum evaporation
National licenceIOP Institute of Physics | 1959| -
A method for extending the life of oxide-coated filaments in hot cathode ionization gauges
National licenceIOP Institute of Physics | 1962| -
Muscle Twitch Tension - Influence of Electrical Stimulating Conditions at Different Temperatures II. Results For Nitrate Ringer's
National licenceIOP Institute of Physics | 1964| -
Muscle Twitch Tension - Influence of Electrical Stimulating Conditions at Different Temperatures I. Results for Chloride Ringer's
National licenceIOP Institute of Physics | 1964| -
Muscle Twitch Tension - Influence of Electrical Stimulating Conditions at Different Temperatures III. Analysis and Correlation
National licenceIOP Institute of Physics | 1965| -
Muscle Twitch Tension - Influence of Electrical Stimulating Conditions at Different Temperatures IV. Time Rate of Rise of Tension
National licenceIOP Institute of Physics | 1965| -
The electrostatic deflection of sputtered ions by the incident sputtering beam
National licenceIOP Institute of Physics | 1971| -
A direct measurement of the generating function for photoelectron counting experiments in the case of a Lorentz spectral line
National licenceIOP Institute of Physics | 1971| -
The spectrum of cosmic ray neutrons at sea level in the range 0.4-1.2 GeV
National licenceIOP Institute of Physics | 1971| -
Electronic structure based on the local atomic environment for tight-binding bands
National licenceIOP Institute of Physics | 1972| -
Charged particle sputtering: distortion of trajectories by the incident beam field
National licenceIOP Institute of Physics | 1972| -
A measurement of pulse separations for photoelectrons in the case of a Lorentz spectral line
National licenceIOP Institute of Physics | 1972| -
The electronic structure of the (111) surface of silicon
National licenceIOP Institute of Physics | 1973| -
Electronic structure based on the local atomic environment for tight-binding bands. II
National licenceIOP Institute of Physics | 1975| -
Electronic structure from non-hermitian representations of the Hamiltonian
National licenceIOP Institute of Physics | 1975| -
The position of the 4d94f 1P level relative to the ionization limit in Ba I
National licenceIOP Institute of Physics | 1975| -
Towards an interpretation of optical data from copper-rich CuGa and CuGe alloys
National licenceIOP Institute of Physics | 1975| -
The resolution limit in ion beam experiments due to small angle scattering off background gas
National licenceIOP Institute of Physics | 1976| -
Stress and temperature dependence of the electronic properties of n-type silicon inversion layers
National licenceIOP Institute of Physics | 1977| -
Broken-symmetry ground states in n-type inversion layers of Ge and GaP
National licenceIOP Institute of Physics | 1977| -
Observation and interpretation of the photoionization cross section of the neutral iron atom (Fe I)
National licenceIOP Institute of Physics | 1977| -
Broken symmetry states in n-type silicon inversion layers
National licenceIOP Institute of Physics | 1978| -
Energetics of the martensitic phase transition in sodium
National licenceIOP Institute of Physics | 1979| -
A calculation of the electronic structure of the amorphous Pd80Si20 system
National licenceIOP Institute of Physics | 1979| -
An electrostatic coaxial probe forming lens suitable for high-energy ion beams
National licenceIOP Institute of Physics | 1979| -
Cohesive properties of CaF2 and UO2 in the atomic sphere approximation
National licenceIOP Institute of Physics | 1980| -
A theoretical study of defects in amorphous group-V semiconductors
National licenceIOP Institute of Physics | 1981| -
Reflectance of silicon carbide in the vacuum ultraviolet
National licenceIOP Institute of Physics | 1981| -
Coaxial sensors for large area temperature monitoring
National licenceIOP Institute of Physics | 1981| -
Finite temperature effects on the electron-phonon interactions in two-dimensional electron gases
National licenceIOP Institute of Physics | 1983| -
Carrier statistics and the low-temperature mobility of semiconductor superlattices
National licenceIOP Institute of Physics | 1983| -
Calculation of photoionisation cross sections, resonance structure and angular distribution for Mn I by many-body perturbation theory
National licenceIOP Institute of Physics | 1983| -
Calculation of photoionisation with excitation from the 3d subshell of atomic manganese
National licenceIOP Institute of Physics | 1983| -
Electrons at a semiconductor heterojunction subject to a periodic biasing potential
National licenceIOP Institute of Physics | 1984| -
Phonon boundary scattering at a silicon-sapphire interface
National licenceIOP Institute of Physics | 1984| -
Structure of a plane and stationary ionizing current sheath
National licenceIOP Institute of Physics | 1984| -
The two-dimensional electron gas subject to a weak periodic potential
National licenceIOP Institute of Physics | 1985|
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