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Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates” [Aug 18 3379-3387]
British Library Online Contents | 2019| -
Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”
British Library Online Contents | 2019| -
Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates” [Aug 18 3379-3387]
British Library Online Contents | 2019| -
Method and device for measuring source parasitic parameters and drain current of power device
Free accessEuropean Patent Office | 2023| -
Wafer-level trimming method for chip reference voltage temperature drift coefficient
Free accessEuropean Patent Office | 2022| -
Desaturation short-circuit protection circuit, power device short-circuit protection circuit and test circuit
Free accessEuropean Patent Office | 2022| -
Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer
Online Contents | 2009| -
Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications
Online Contents | 2006| -
Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation
Online Contents | 2006| -
Silicon on insulator (SOI)-based GaN wafer and preparation method thereof
Free accessEuropean Patent Office | 2021| -
Working junction temperature monitoring system and method of semiconductor switching device
Free accessEuropean Patent Office | 2023| -
Method for improving current capability and process stability of p-GaN HEMT
Free accessEuropean Patent Office | 2023|
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