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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography
Tema Archive | 2010|In the semiconductor manufacturing industry, wafer handling introduces micro-cracks at the wafer edge. During heat treatment these can ... -
A neutronic method to determine low hydrogen concentrations in metals
Tema Archive | 2007|device, to perform the analysis 'in situ'. The authors give a brief description of the usual methods to determine low hydrogen contents in solids ...Keywords: In-Situ-Messung -
MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects
Tema Archive | 2010|defects in Al(x)Ga(1-x)As crystals caused by Al, Ga and As recoils of energies in the range of 50-400 eV. The crystals are kept at room ... -
Track-etched nanopores in spin-coated polycarbonate films applied as sputtering mask
Tema Archive | 2009|Thin polycarbonate films were spin-coated on silicon substrates and subsequently irradiated with 1-GeV U ions. The ion tracks in the ... -
Depolarization effects in electron spin polarization of 4.He(+) ion beam
Tema Archive | 2007|Spin polarization of He(+) ions in Penning ionization of optically pumped He metastable atoms has been investigated. It was indicated that ... -
Heavy ion Rutherford backscattering spectrometry (HIRBS) study of barium diffusion in borosilicate glass
Tema Archive | 2008|Diffusion of barium in borosilicate glasses containing sodium and calcium has been studied using heavy ion Rutherford backscattering ... -
Phase formation in Ti after high fluence/high temperature nitrogen implantation
Tema Archive | 2006|Nitrogen ion implantation in titanium using plasma immersion ion implantation (PIII) is investigated at a pulse voltage of 15 keV and ... -
Quantum interference in grazing scattering of swift He atoms from LiF(0 0 1) surfaces: Surface eikonal approximation
Tema Archive | 2009|This work deals with the interference effects recently observed in grazing collisions of few-keV atoms with insulator surfaces. The process ... -
Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si(+) post implantation
Tema Archive | 2007|-related light emission observed at around 625 nm emerges only in the case of high implantation fluence. These sample sets were post implanted with ... -
3D strain imaging in sub-micrometer crystals using cross-reciprocal space measurements: Numerical feasibility and experimental methodology
Tema Archive | 2010|Direct inversion of coherent X-ray diffraction patterns is a powerful method to image strains in individual crystals with a high spatial ... -
Displacement per atom calculation in YBCO superconductors through Monte Carlo simulation
Tema Archive | 2007|applied using the Monte Carlo simulation through the MCNPX code system. Then, based on this algorithm, the displacement per atom in-depth ... -
Er(+) implantation in SnO2:SiO2 layers: Structure changes and light emission
Tema Archive | 2009|Structure changes and light emission behavior in Er(+) implanted SnO2:SiO2 layers are studied, using transmission electron microscopy (TEM ... -
Modelling radiation-induced phase changes in binary FeCu and ternary FeCuNi alloys using an artificial intelligence-based atomistic kinetic Monte Carlo approach
Tema Archive | 2009|migration energy barriers of point defects, to the study of the microchemical evolution driven by vacancy diffusion in FeCu and FeCuNi alloys. These ...Keywords: Anwendung in der Kerntechnik -
Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation
Tema Archive | 2006|Metal-ion implantation followed by thermal oxidation was carried out to fabricate zinc-oxide (ZnO) nanoparticles (NPs) in silica glass (SiO ... -
Blocking of alkaline migration under ionizing irradiation in Cr-doped oxide glasses
Tema Archive | 2008|doping content in theses glasses, we observe also by EPR spectroscopy a complete blocking of defects production under ionizing radiation for ... -
Electron transport effects in ion induced electron emission
Tema Archive | 2007|, electron transport (and multiplication) and electron escape through the potential barrier at the surface. In many cases, the first step of the ... -
Influence of annealing temperatures and time on the photoluminescence properties of Si nanocrystals embedded in SiO2
Tema Archive | 2009|implantation of Si ions into a SiO2 matrix, followed by thermal treatment in a nitrogen atmosphere. The evolution of the photoluminescence under ... -
Determination of the effective atomic numbers and electron densities for YBaCuO superconductor in the range 59.5-136 keV
Tema Archive | 2008|calculated by using the measured mass attenuation coefficients. Measurements were made by performing transmission experiments in a well-collimated ... -
Heat deposition in thick targets due to interaction of high energy protons and thermal hydraulics analysis
Tema Archive | 2008|, Fe, Cu, Pb and Bi at proton energies of 0.8 GeV, 1.0 GeV and 1.2 GeV. A more continuous heat deposition approach which has been adopted in ...
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