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Size-dependence of the dielectric breakdown strength from nano- to millimeter scale
British Library Online Contents | 2014| -
Optimization of the Specimen Geometry of Unidirectional Reinforced Composites with a Fibre Orientation of 90° for Tensile, Quasi-Static and Fatigue Tests
British Library Conference Proceedings | 2019| -
Global‐scale river network extraction based on high‐resolution topography and constrained by lithology, climate, slope, and observed drainage density
Online Contents | 2017|Contributors: Coulon, C -
6.6.5 Growth of quantum wells in GaSb-based superlattice detectors
Growth of quantum wells and quantum dots on GaSb substratesLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.4.4 Group III–nitride based quantum wires
Growth of group III–nitride compounds for nanostructure device applicationsLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.9 Examples of III-V layers and nanostructures with diluted semiconductor materials
Semiconductor Quantum Structures: Examples for III-V semiconductorsLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.5.3 Growth and fabrication of InGaAsP nanowhiskers on InP and silicon substrates
Growth and fabrication of quantum wells and wires on InP substrateLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.5.1 Growth of GaInAs quantum wells on InP substrates
Growth and fabrication of quantum wells and wires on InP substrateLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.3 Growth and preparation of quantum dots and nano crystals on GaAs substrates
Semiconductor Quantum Structures: Examples for III-V semiconductorsLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.6.2 Growth of quantum wells in GaSb-based type-II diode lasers
Growth of quantum wells and quantum dots on GaSb substratesLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.6 Growth of quantum wells and quantum dots on GaSb substrates
Semiconductor Quantum Structures: Examples for III-V semiconductorsLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.5.7 Site-selective growth of InAs quantum dots on InP
Growth and fabrication of quantum wells and wires on InP substrateLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.5.2 Lithographically defined nanowires
Growth and fabrication of quantum wells and wires on InP substrateLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C. -
6.4.5 Group III–nitride based quantum dots
Growth of group III–nitride compounds for nanostructure device applicationsLandolt-Börnstein / Springer Materials | 2013|Contributors: Klingshirn, C.
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