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GaP, GaAs, GaSb, InP, InAs, InSb; Figs. 344 - 363
8.2.2.2.4 III-V compoundsLandolt-Börnstein / Springer Materials | 1996| -
9.1.1.3.2 Field ion microscopy
9.1.1.3 Field ion emissionLandolt-Börnstein / Springer Materials | 1996| -
Cr, Mo, W; Figs. 114 - 131, Tables 10 - 12
8.2.2.1.7 Group VIBLandolt-Börnstein / Springer Materials | 1996| -
9.1.1.2.3 Applications of field electron emission
9.1.1.2 Field electron emissionLandolt-Börnstein / Springer Materials | 1996| -
8.3.3 Referenees for 8.3
8.3 X-ray diffraction of surface structuresLandolt-Börnstein / Springer Materials | 1996| -
8.3.1.4 Truncation Rod Scattering (TRS)
8.3.1 IntroductionLandolt-Börnstein / Springer Materials | 1996| -
9.2.1.5 Limitations and continued development of STM
9.2.1 IntroductionLandolt-Börnstein / Springer Materials | 1996| -
9.1.2 Data
9.1 Field emission, field ionization, and field desorptionLandolt-Börnstein / Springer Materials | 1996| -
8.1.1.5 Surface photovoltage spectroscopy
8.1.1 IntroductionLandolt-Börnstein / Springer Materials | 1996| -
9.2.3 References for 9.2
9.2 Scanning tunneling microscopy (STM)Landolt-Börnstein / Springer Materials | 1996| -
9.2.1.1 Principles and experimental implementation of STM
9.2.1 IntroductionLandolt-Börnstein / Springer Materials | 1996| -
9.1.1.4.1 Theory of field desorption
9.1.1.4 Field desorptionLandolt-Börnstein / Springer Materials | 1996| -
8.2.3 References for 8.2
8.2 Photoemission and inverse photoemissionLandolt-Börnstein / Springer Materials | 1996| -
Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt; Figs. 149 - 167, Tables 17 - 20
8.2.2.1.9 Group VIHLandolt-Börnstein / Springer Materials | 1996| -
9.1.3 References for 9.1
9.1 Field emission, field ionization, and field desorptionLandolt-Börnstein / Springer Materials | 1996|
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