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SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
British Library Conference Proceedings | 2014| -
Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40^oC to 500^oC
British Library Conference Proceedings | 2014| -
SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
British Library Online Contents | 2014| -
Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40^oC to 500^oC
British Library Online Contents | 2014| -
High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
British Library Conference Proceedings | 2013| -
High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
British Library Online Contents | 2013| -
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
British Library Conference Proceedings | 2010| -
Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
British Library Online Contents | 2010| -
Characterization of La~xHf~yO Gate Dielectrics in 4H-SiC MOS Capacitor
British Library Online Contents | 2014| -
Characterization of La~xHf~yO Gate Dielectrics in 4H-SiC MOS Capacitor
British Library Conference Proceedings | 2014| -
Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
British Library Conference Proceedings | 2013| -
Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
British Library Online Contents | 2013| -
Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
British Library Conference Proceedings | 2013|
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