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Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride
British Library Online Contents | 2002| -
Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride
British Library Conference Proceedings | 2002| -
Selective low pressure chemical vapour deposition epitaxy using silane only for advanced device applications
British Library Online Contents | 1995| -
Boron diffusion across silicon–silicon germanium boundaries
National licenceAmerican Institute of Physics | 1998| -
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
Online Contents | 1999| -
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
British Library Online Contents | 1999| -
Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system
National licenceAmerican Institute of Physics | 1992| -
Diffusion of Ion-Implanted Boron in High Ge Content SiGe Alloys
British Library Conference Proceedings | 2004| -
Dislocation glide in {110} planes in semiconductors with diamond or zinc‐blende structure
National licenceAmerican Institute of Physics | 1993| -
Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC
British Library Online Contents | 2004| -
Formation of continuous CoSi2 layers by high Co dose implantation into Si(100)
National licenceAmerican Institute of Physics | 1990| -
Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments
British Library Online Contents | 2006| -
Comparison of arsenic diffusion in Si1−xGex formed by epitaxy and Ge+ implantation
National licenceAmerican Institute of Physics | 2003| -
Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si~0~.~9Ge~0~.~1
British Library Online Contents | 2004| -
Study of fluorine behavior in silicon by selective point defect injection
National licenceAmerican Institute of Physics | 2005| -
Arsenic Diffusion in Si and Si~0~.~9Ge~0~.~1 Alloys: Effect of Defect Injection
British Library Conference Proceedings | 2004| -
Arsenic Diffusion in Si and Si~0~.~9Ge~0~.~1 Alloys: Effect of Defect Injection
British Library Conference Proceedings | 2004| -
Effect of fluorine on boron thermal diffusion in the presence of point defects
British Library Online Contents | 2005| -
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
British Library Conference Proceedings | 1999| -
Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces
British Library Conference Proceedings | 1997|
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