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On the formation of the L-centre in silicon during heat treatment in the temperature range 205-285^oC
British Library Online Contents | 2006| -
An AlGaN/GaN HEMT power switch employing a field plate and a floating gate
British Library Online Contents | 2006| -
Organic molecular beam deposition system and initial studies of organic layer growth
British Library Online Contents | 2006| -
Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor
British Library Online Contents | 2006| -
Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150^oC
British Library Online Contents | 2006| -
Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers
British Library Online Contents | 2006| -
An annealing method for switching AlGaN/GaN field effect transistors employing an excimer laser
British Library Online Contents | 2006| -
Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors
British Library Online Contents | 2006| -
Electronic structure calculations for substitutional copper and monovacancies in silicon
British Library Online Contents | 2006| -
Temperature dependence of the spectral response of lateral, MBE-grown, ion-milled, planar, Hg~1~-~xCd~xTe photodiodes
British Library Online Contents | 2006| -
Annealing study of H~2O and O~3 grown Al~2O~3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC
British Library Online Contents | 2006| -
Luminescence from silicon nanoparticles in SiO~2: atomic force microscopy and transmission electron microscopy studies
British Library Online Contents | 2006| -
2D modelling of nanoscale double gate silicon-on-insulator MOSFETs using conformal mapping
British Library Online Contents | 2006| -
Organic thin film transistors with indium tin oxide bottom electrode
British Library Online Contents | 2006|
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