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The Origin and Formation Mechanism of an Inclined Line-like Defect in 4H-SiC Epilayers
Free accessBASE | 2022| -
Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface
Free accessBASE | 2018| -
CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
Free accessBASE | 2019| -
CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers
American Institute of Physics | 2019| -
Dynamic Model for Service Composition and Optimal Selection in Cloud Manufacturing Environment
Springer Verlag | 2018| -
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
Free accessBASE | 2018| -
Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
Free accessBASE | 2019|
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