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Junctions For Deep Sub-100 Nm MOS: How Far Will Ion Implantation Take Us?
British Library Conference Proceedings | 2001| -
Trace Element Geochemistry in the Waters of Pulicat Lake, South India
British Library Online Contents | 1994| -
Snow-cover development as a component of the local geosystem on Potter Peninsula, King George Island, Antarctica
British Library Conference Proceedings | 1993| -
Summary Abstract: The influence of reconstruction on epitaxial growth: Ge on Si(100)‐2×1 and Si(111)‐7×7
American Institute of Physics | 1985| -
Doping of Si thin films by low-temperature molecular beam epitaxy
British Library Online Contents | 1993| -
Summary Abstract: Application of high energy ion channeling to GaAs(110)
American Institute of Physics | 1983| -
Antimony Delta Doping By Scanning Transmission Electron Microscopy And And Electron Energy Loss Spectroscopy
British Library Online Contents | 1999| -
Summary Abstract: Interface formation in IV–IV heterostructures: Tin on silicon
American Institute of Physics | 1987| -
Boron-Enhanced-Diffusion of Boron from Ultra-Low-Energy Boron Implantation
British Library Conference Proceedings | 1998| -
Carbon diffusion in silicon: a tool to engineer dopant profiles in silicon (Invited Lecture)
British Library Conference Proceedings | 2000| -
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
National licenceAmerican Institute of Physics | 1999| -
Depth dependence of {311} defect dissolution
National licenceAmerican Institute of Physics | 2001| -
The Effect of Fluorine from BF~2 Source/Drain Extension Implants on Performance of PMOS Transistors with Thin Gate Oxides
British Library Online Contents | 2001|
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