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Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors
National licenceIOP Institute of Physics | 2013|Keywords: 78.55.Cr -
Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
Wiley | 2007|Keywords: 78.55.Cr -
High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate
Wiley | 2007|Keywords: 78.55.Cr -
Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates
Wiley | 2008|Keywords: 78.55.Cr -
Photoluminescence studies of GaN: A comparison between layers grown on sapphire and nitridated GaAs layers
Wiley | 2005|Keywords: 78.55.Cr -
Photoluminescence and Raman study of hexagonal InN and In‐rich InGaN alloys
Wiley | 2003|Keywords: 78.55.Cr -
Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy
Wiley | 2007|Keywords: 78.55.Cr -
Improvement of photoluminescence by Si delta‐doping in GaN barrier layer of GaN/InxGa1–xN multi‐quantum wells
Wiley | 2005|Keywords: 78.55.Cr -
Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model
Wiley | 2010|Keywords: 78.55.Cr -
Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys
Wiley | 2006|Keywords: 78.55.Cr -
Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN
Wiley | 2009|Keywords: 78.55.Cr -
Red luminescence from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy
Wiley | 2007|Keywords: 78.55.Cr -
Improvement of luminescence capability of Tb3+‐related emission by AlxGa1−xN
Wiley | 2003|Keywords: 78.55.Cr -
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure
Wiley | 2004|Keywords: 78.55.Cr -
Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift‐off
Wiley | 2004|Keywords: 78.55.Cr
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