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Inspection method for contact/via-holes using a low-energy electron microcolumn
American Institute of Physics | 2009| -
Importance of evaporation in the design of materials for step and flash imprint lithography
American Institute of Physics | 2005| -
Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition
American Institute of Physics | 2001| -
Reproducible nanostructure fabrication using atomic force microscopy indentation with minimal tip damage
American Institute of Physics | 2014| -
Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2
American Institute of Physics | 1990| -
Three-dimensional proximity effect correction for large-scale uniform patterns
American Institute of Physics | 2011| -
Nanomechanical structures with 91 MHz resonance frequency fabricated by local deposition and dry etching
American Institute of Physics | 2004| -
Global warming gas emission during plasma cleaning process of silicon nitride using chemistry with additive Ar and
American Institute of Physics | 2004| -
Enhancement of spatial resolution in generating point spread functions by Monte Carlo simulation in electron-beam lithography
American Institute of Physics | 2011| -
Noise reduction and peak detection in x-ray diffraction data by linear and nonlinear methods
American Institute of Physics | 2023| -
Strong enhancement of ultraviolet emission from ZnO films by V implantation
American Institute of Physics | 2011| -
Real‐time process and product diagnostics in rapid thermal chemical vapor deposition using in situ mass spectrometric sampling
American Institute of Physics | 1995| -
Vinyl ether formulations for step and flash imprint lithography
American Institute of Physics | 2005| -
Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers
American Institute of Physics | 2005| -
Application of neural network to controlling three-dimensional electron-beam exposure distribution in resist
American Institute of Physics | 2009| -
Study of isoelectronic In doping in molecular beam epitaxy grown GaAs thyristors
American Institute of Physics | 1990| -
Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures
American Institute of Physics | 2004| -
Deep-ultraviolet–microelectromechanical systems stencils for high-throughput resistless patterning of mesoscopic structures
American Institute of Physics | 2004| -
Optimization of the temperature distribution across stencil mask membranes under ion beam exposure
American Institute of Physics | 1998| -
Detection and control of ferroelectric domains by an electrostatic force microscope
American Institute of Physics | 1998| -
Lithographic tuning of photonic-crystal unit-cell resonators with quantum dots emitting at
American Institute of Physics | 2005| -
Experimental validation of full-field extreme ultraviolet lithography flare and shadowing corrections
American Institute of Physics | 2008| -
Effect of Mg(OH)2 on YBa2Cu3O7 thin film on MgO substrate studied by atomic force microscope
American Institute of Physics | 1994| -
Effect of ambient gas in sealing process on field emission characteristics
American Institute of Physics | 2000| -
Effect of neutral beam etching of on the GaN device characteristics
American Institute of Physics | 2007| -
Novel resistive layer structure using via holes of an insulating interdielectric as a current path
American Institute of Physics | 2001| -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
American Institute of Physics | 2013| -
Surface kinetic considerations for molecular‐beam epitaxy growth of high‐quality inverted heterointerfaces
American Institute of Physics | 1988| -
Low‐temperature growth and characterization of GaAs epitaxial layer on (111)B GaAs substrates
American Institute of Physics | 1994| -
Epitaxial staircase structure for the calibration of electrical characterization techniques
American Institute of Physics | 1998| -
Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes
American Institute of Physics | 2010| -
Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
American Institute of Physics | 2014| -
Performance of Zr/O/W Schottky emitters at reduced temperatures
American Institute of Physics | 1997| -
Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
American Institute of Physics | 1995| -
Round-off of trench corner by post-cylindrical molecular pump sidewall oxidation for 0.25 μm and beyond technologies
American Institute of Physics | 2000| -
Evaluation of Zr/O/W Schottky emitters for microcolumn applications
American Institute of Physics | 1994| -
Effect of a deep-level trap on hole transport in metal–semiconductor–metal photodetectors
American Institute of Physics | 1998| -
Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition
American Institute of Physics | 2003| -
Molecular beam epitaxy growth of antimonide type-II “W” high-power interband cascade lasers and long-wavelength infrared photodiodes
American Institute of Physics | 2007| -
Analysis of the energy distribution of field electrons from metals and semiconductors
American Institute of Physics | 2006| -
Vinyl ethers in ultraviolet curable formulations for step and flash imprint lithography
American Institute of Physics | 2004| -
Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates
American Institute of Physics | 2006| -
Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy
American Institute of Physics | 2007|
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