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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors
British Library Online Contents | 2019| -
Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
Free accessAmerican Institute of Physics | 2022| -
Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation
Online Contents | 2017|Contributors: Phung, Luong Viet -
Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation
Online Contents | 2017|Contributors: Phung, Luong Viet -
Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
National licenceTrans Tech Publications | 2022|Contributors: Phung, Luong Viêt -
Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)
National licenceTrans Tech Publications | 2020|Contributors: Phung, Luong Viet -
Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates
IOP Institute of Physics | 2024| -
Investigation of SiC Thyristors with Varying Amplifying Gate Design
National licenceTrans Tech Publications | 2022|Contributors: Phung, Luong Viêt -
Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes
National licenceTrans Tech Publications | 2018|Contributors: Phung, Luong Viet -
4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method
National licenceTrans Tech Publications | 2022|Contributors: Phung, Luong Viêt
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