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Deep depletion capacitance–voltage technique for spatial distribution of traps across the substrate in MOS structures
Elsevier | 2020|Keywords: C–V characteristics, Deep-depletion C–V -
Explanations of inconsistencies in capacitance–voltage profiles of normal and inverted heterostructures
Elsevier | 2013|Keywords: C–V measurement -
Insulated gate and surface passivation structures for GaN-based power transistors
Free accessBASE|Keywords: C-V -
A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system
Elsevier | 2015|Keywords: C–V hysteresis -
Low Trap Density in InAs/High‑k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
American Chemical Society | 2016|Keywords: C−V -
Solidification microstructures and mechanical properties of high-vanadium Fe–C–V and Fe–C–V–Si alloys
Elsevier | 2009|Keywords: Fe–C–V and Fe–C–V–Si alloys -
Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)
Free accessDOAJ | 2020|Keywords: c–v characteristics -
The validity of Kohlrausch law for the photocurrent transient and the role of N2/Ar flow ratio in photoconductivity of sputtered CoZnO
Elsevier | 2017|Keywords: I/C-V characteristics -
Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes
Elsevier | 2012|Keywords: C–V measurements -
Doping profile extraction in thin SOI films: Application to A2RAM
Elsevier | 2019|Keywords: C-V characteristic -
Charging Effects in Al-$ SiO_{2} $-p-Si Structures After Low-Energy Electron Beam Irradiation
Online Contents | 2020|Keywords: C–V characteristics -
Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics
National licenceTrans Tech Publications | 2013|Keywords: C-V -
Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
National licenceTrans Tech Publications | 2010|Keywords: C-V Characterization -
Confetti of thoughts on library & information studies : essays in honour of Prof. (Dr.) C.V. Rajan Pillai
TIBKAT | 2010|Keywords: Rajan Pillai, C. V -
Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations
National licenceTrans Tech Publications | 2020|Keywords: C-V Measurements
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