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Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays
American Institute of Physics | 2015| -
Scalable integration of periodically aligned 2D-MoS2 nanoribbon array
Free accessAmerican Institute of Physics | 2018| -
Aluminum/aluminum‐nitride sputter deposition on the inertial fusion target using the pulsed‐gas process
American Institute of Physics | 1985| -
Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition
National licenceAmerican Institute of Physics | 2010| -
Plasma damage-free deposition of Al cathode on organic light-emitting devices by using mirror shape target sputtering
National licenceAmerican Institute of Physics | 2004| -
Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
Free accessAmerican Institute of Physics | 2020| -
Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
National licenceAmerican Institute of Physics | 2001| -
Laser processing of nanocrystalline TiO2 films for dye-sensitized solar cells
National licenceAmerican Institute of Physics | 2004| -
Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes
National licenceAmerican Institute of Physics | 2001| -
Shear-induced mesostructure in nanoplatelet-polymer networks
National licenceAmerican Institute of Physics | 2003| -
Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
American Institute of Physics | 2019| -
nBn structure based on InAs/GaSb type-II strained layer superlattices
National licenceAmerican Institute of Physics | 2007| -
Arcjet plasma plume effect on a microwave reflector antenna
National licenceAmerican Institute of Physics | 1990| -
The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
National licenceAmerican Institute of Physics | 2004| -
A versatile optical diffusiometer including a large optical bench of new design
National licenceAmerican Institute of Physics | 1973| -
Zero field magnetic phase transitions and anomalous low temperature upturn in resistivity of single crystalline α-TmAlB4
National licenceAmerican Institute of Physics | 2010| -
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
National licenceAmerican Institute of Physics | 2005| -
Elucidating gigahertz acoustic modulation of extraordinary optical transmission through a two-dimensional array of nano-holes
American Institute of Physics | 2017| -
Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics
National licenceAmerican Institute of Physics | 2000|
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