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A low damage GaN-based light-emitting diode with textured/inclined sidewalls and an air-buffer layer
British Library Online Contents | 2010| -
Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes
British Library Online Contents | 2009| -
High-Breakdown and High-Linearity Ga~0~.5~1 1 In~0~.~4~9P/In~0~.~1~5Ga~0~.~8~5As Pseudomorphic HEMT
British Library Conference Proceedings | 1999| -
Strain hardening and orientation hardening/softening in cold rolled AA 5052 aluminum alloy
British Library Online Contents | 2008| -
A High-Breakdown and Low-Offset Voltage InGaP/GaAs Heterostructure Bipolar Transistor for Power System Applications
SAE Technical Papers | 1999| -
A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD
EDP Sciences | 1999| -
Time-dependent changes in BDNF expression of pentylenetetrazole-induced hippocampal astrocytes in vitro
British Library Online Contents | 2012| -
On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
British Library Online Contents | 2003| -
A new wide voltage operation regime double heterojunction bipolar transistor
British Library Online Contents | 2000| -
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor
British Library Conference Proceedings | 2003| -
Microstructure Evolution and Mechanical Anisotropy of Strip Cast and Direct Chill Cast AA5182 Aluminum Alloy
British Library Online Contents | 2002| -
Microstructure Evolution and Mechanical Anisotropy of Strip Cast and Direct Chill Cast AA5182 Aluminum Alloy
British Library Conference Proceedings | 2002| -
A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications
SAE Technical Papers | 1999| -
High-Breakdown and High-Linearity Ga~0~.~5~1In~0~.~4~9P/In~0~.~1~5Ga~0~.~8~5As Pseudomorphic HEMT's Prepared by Selectively Removing Mesa Sidewalls
British Library Conference Proceedings | 1999|
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