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The influence of polarizability on the emission of sputtered molecular ions
National licenceElsevier | 1993| -
Focused‐ion‐beam implantation of Ga in elemental and compound semiconductors
American Institute of Physics | 1995| -
Emission-angle integrated yields of neutral clusters in sub-keV-energy sputtering
National licenceElsevier | 1991| -
Yields and composition changes in low-energy sputtering of binary alloys: Experiments and computer simulations
National licenceAmerican Physical Society | 1993| -
Analytical performance of a secondary‐neutral microprobe with electron‐gas postionization and magnetic‐sector mass spectrometer
American Institute of Physics | 1994| -
Preferential sputtering of isotopes: Fluence and emission-angle dependence
National licenceAmerican Physical Society | 1989| -
Hydrogen analysis by secondary ion mass spectrometry using HCs+ ions
National licenceElsevier | 1992| -
Isotopic mass effects in sputtering: Dependence on fluence and emission angle
National licenceElsevier | 1990| -
Angle-integrated yields of neutral clusters in low-energy sputtering of nickel and copper
National licenceElsevier | 1991| -
Secondary‐neutral microprobe with electron‐gas post‐ionization
National licenceAmerican Institute of Physics | 1993| -
MCs+ secondary ion and sputtering yields of oxygen-exposed semiconductors and glasses
National licenceSpringer Verlag | 1995| -
MCs^+ secondary ion and sputtering yields of oxygen-exposed semiconductors and glasses
British Library Online Contents | 1995| -
$ MCs^{+} $ secondary ion and sputtering yields of oxygen-exposed semiconductors and glasses
Online Contents | 1995| -
Analysis of solids with a secondary-neutral microprobe based on electron-gas post-ionization
Online Contents | 1995| -
Analysis of solids with a secondary-neutral microprobe based on electron-gas post-ionization
National licenceSpringer Verlag | 1995|
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