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Anomalous phase behavior of first-order fluid-liquid phase transition in phosphorus
American Institute of Physics | 2017| -
Commissioning of two RF operation modes for RF negative ion source experimental setup at HUST
Free accessAmerican Institute of Physics | 2017| -
Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
American Institute of Physics | 2021| -
Tip-sensitive all-silica fiber-optic Fabry–Perot ultrasonic hydrophone for charactering high intensity focused ultrasound fields
National licenceAmerican Institute of Physics | 2013| -
High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film
American Institute of Physics | 2014| -
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
National licenceAmerican Institute of Physics | 2009| -
A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector
National licenceAmerican Institute of Physics | 2011| -
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
National licenceAmerican Institute of Physics | 2011| -
Effect of light Si-doping on the near-band-edge emissions in high quality GaN
National licenceAmerican Institute of Physics | 2012| -
High efficient GaN-based laser diodes with tunnel junction
National licenceAmerican Institute of Physics | 2013| -
Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
National licenceAmerican Institute of Physics | 2012| -
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
American Institute of Physics | 2014| -
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
National licenceAmerican Institute of Physics | 2012| -
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition
National licenceAmerican Institute of Physics | 2006| -
New development of advanced superconducting electron cyclotron resonance ion source SECRAL (invited)
National licenceAmerican Institute of Physics | 2010| -
Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
American Institute of Physics | 2013| -
Effect of MgO/Co interface and Co/MgO interface on the spin dependent transport in perpendicular Co/Pt multilayers
American Institute of Physics | 2014| -
Production of highly charged ion beams with SECRAL
National licenceAmerican Institute of Physics | 2010| -
An electron cyclotron resonance ion source based low energy ion beam platform
National licenceAmerican Institute of Physics | 2008| -
Inverse magnetoresistance caused by nano-nitride-layer doping at the inner interfaces in the sandwich of Co/Cu/Co
National licenceAmerican Institute of Physics | 2006|
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