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Growth-temperature-dependent optical and acetone detection properties of ZnO thin filmsProject supported by the Dong-Eui University Grant (No. 2014AA342).
PaperIOP Institute of Physics | 2015| -
Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates
PaperIOP Institute of Physics | 2015| -
Influence of dot size distribution and interlayer thickness on the optical property of closely stacked InAs/GaAs quantum dots with growth interruption
National licenceIOP Institute of Physics | 2008| -
Cavity length and temperature dependent characteristics of compressively strained InGaAsP MQW BH lasers with a two-step compositional SCH structure
National licenceIOP Institute of Physics | 2008| -
Improvement of signal-to-noise ratio of a beat note by cascading an Yb-doped fiber amplifier in an Er-fiber comb
PaperIOP Institute of Physics | 2017| -
Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
National licenceIOP Institute of Physics | 2010| -
Softness measurements for open-cell foam materials and human soft tissue
National licenceIOP Institute of Physics | 2006| -
Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
National licenceIOP Institute of Physics | 2004| -
Influence of thermal treatment and electron-blocking layers on the optical properties of InGaP/InGaAlP MQW structures for red RCLEDs
National licenceIOP Institute of Physics | 2010| -
Rectifying effect through the interface of SrTiO3−δ/GaAs heterojunctions
PaperIOP Institute of Physics | 2014| -
Mechanisms of current flow in p-TlGaSe2 single crystals
National licenceIOP Institute of Physics | 2006| -
The sign of electron g-factor in GaAs1−xNx measured by using the Hanle effect
National licenceIOP Institute of Physics | 2008| -
The effect of thermal annealing on impurity states in ferroelectric-semiconductor TlGaSe2 within the incommensurate phase
National licenceIOP Institute of Physics | 2006| -
Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method
PaperIOP Institute of Physics | 2019| -
Wide-band low-input-impedance trans-impedance amplifiers for instrumentation applications
National licenceDESIGN NOTEIOP Institute of Physics | 1997| -
Pressure dependence of the Pb centre measured by voltage transient spectroscopy
National licenceIOP Institute of Physics | 1990| -
Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts
National licenceIOP Institute of Physics | 2008| -
Influence of the Pt barrier on Ti/Al/Pt/Au ohmic contacts to n-GaN studied by Rutherford backscattering spectrometry and x-ray diffraction
National licenceIOP Institute of Physics | 2006| -
Development of a low-cost micro-CMM for 3D micro/nano measurements
National licenceIOP Institute of Physics | 2006| -
Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
PaperIOP Institute of Physics | 2015|
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