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Real-time interferometric monitoring and measuring of photopolymerization based stereolithographic additive manufacturing process: sensor model and algorithm
PaperIOP Institute of Physics | 2017| -
Phase-compensation-based dynamic time warping for fault diagnosis using the motor current signal
National licencePaperIOP Institute of Physics | 2012| -
Layered oxychalcogenide in the Bi–Cu–O–Se system as good thermoelectric materials
PaperIOP Institute of Physics | 2014| -
High temperature and frequency pressure sensor based on silicon-on-insulator layers
National licenceIOP Institute of Physics | 2006| -
Tip hydrogen sensor based on liquid-filled in-fiber Fabry–Pérot interferometer with Pt-loaded WO3 coating
PaperIOP Institute of Physics | 2020| -
Reconstruction of electrostatic force microscopy image for nanoscale potential distributions with potential steps
PaperIOP Institute of Physics | 2017| -
A GaN photodetector integrated structure for wavelength characterization of ultraviolet light
National licenceIOP Institute of Physics | 2008| -
Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
PaperIOP Institute of Physics | 2017| -
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
National licenceIOP Institute of Physics | 2009| -
Effect of post annealing on the band gap of MgxZn1−xO thin films
National licenceIOP Institute of Physics | 2008| -
Electrical transport properties in nitrogen-doped p-type ZnO thin film
National licenceIOP Institute of Physics | 2006| -
Measurement of threading dislocation densities in GaN by wet chemical etching
National licenceIOP Institute of Physics | 2006| -
A high-speed photoconductive UV detector based on an Mg0.4Zn0.6O thin film
National licenceIOP Institute of Physics | 2007| -
Pump–probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy
National licenceIOP Institute of Physics | 2005| -
Tunnel monitoring using multicore fibre displacement sensor
National licenceIOP Institute of Physics | 2006| -
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
National licenceIOP Institute of Physics | 2013| -
Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector
National licenceIOP Institute of Physics | 2008| -
Positive and negative effects of oxygen in thermal annealing of p-type GaN
National licenceIOP Institute of Physics | 2012| -
Electrical properties of N-doped ZnO grown on sapphire by P-MBE
National licenceIOP Institute of Physics | 2007| -
Implementation of vectorial bend sensors using long-period gratings UV-inscribed in special shape fibres
National licenceIOP Institute of Physics | 2004|
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