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A new technique for measuring Young's modulus of electroplated nickel using AFM
National licenceIOP Institute of Physics | 2006| -
Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 µm
National licenceIOP Institute of Physics | 2004| -
Sidewall mobility and series resistance in a multichannel tri-gate MOSFET
National licenceIOP Institute of Physics | 2013| -
Simultaneous measurement of strain and temperature using a reverse index fiber Bragg grating sensor
National licenceIOP Institute of Physics | 2010| -
Development of an immunosensor with angular interrogation-based SPR spectroscopy
National licenceIOP Institute of Physics | 2007| -
Characteristics of information recording on chalcogenide glassy semiconductors
National licenceIOP Institute of Physics | 2001| -
A new surface-flattening method using single-point diamond turning (SPDT) and its effects on LPE HgCdTe photodiodes
National licenceIOP Institute of Physics | 2006| -
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
National licenceIOP Institute of Physics | 2010| -
Impurity optical absorption of Co2+-doped MgAl2Se4 and CaAl2Se4 single crystals
National licenceIOP Institute of Physics | 2000| -
Measurements of longitudinal gamma ray distribution using a multichannel fiber-optic Cerenkov radiation sensor
PaperIOP Institute of Physics | 2014| -
Electrical characterization of liquid-phase epitaxially grown single-crystal films of mercury cadmium telluride by variable-magnetic-field Hall measurements
National licenceIOP Institute of Physics | 1994| -
Strain relaxation in tensile-strained layers on Si(001)
National licenceIOP Institute of Physics | 1996| -
Development of a fiber-optic dosimeter based on modified direct measurement for real-time dosimetry during radiation diagnosis
National licencePaperIOP Institute of Physics | 2013| -
Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer
National licenceIOP Institute of Physics | 2006| -
A new measurement method of actual focal spot position of an x-ray tube using a high-precision carbon-interspaced grid
PaperIOP Institute of Physics | 2018| -
Photoluminescence spectra of Er3+-doped MgAl2S4 and CaAl2S4 single crystals
National licenceIOP Institute of Physics | 1999| -
Transition from LO-phonon to SO-phonon scattering in mesoscale structures
National licenceIOP Institute of Physics | 1992| -
Effects of a Ni alloying element on Al–Ni metallization
National licenceIOP Institute of Physics | 2012| -
Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPy quantum wells for laser applications
PaperIOP Institute of Physics | 2015| -
Carrier dynamics and recombination in silicon doped InAs/GaAs quantum dot solar cells with AlAs cap layers
PaperIOP Institute of Physics | 2020|
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