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Surface physics with low-energy ion scattering
Tema Archive | 2001|Four versions of low-energy ion scattering (LEIS) measurements are briefly reviewed. In the first version discussed here the charged ... -
Diode-like ion-track asymmetric nanopores: Some alternative methods of fabrication
Tema Archive | 2009|The authors present two fabrication methods which allow production of ion-track nanopore membranes with pronounced geometrical asymmetry ... -
Irradiation effects of a 10 MeV neutron beam on a Nd-Fe-B permanent magnet
Tema Archive | 2010|The effects of irradiation of a Nd-Fe-B permanent magnet by fast neutrons was investigated. The decrease in measured magnetic flux density ...Keywords: radiation effects on instruments -
Effects of gamma-ray irradiation on optical properties of ZnO-PbO-B 2O3 glasses
Tema Archive | 2006|Effects of gamma-ray irradiation on some optical properties of xZnO * 2xPbO * (1-3x)B2O3 glasses have been studied in ... -
Magnetic flux loss in Nd-Fe-B magnet irradiated with 660 MeV carbon ion beam
Tema Archive | 2006|the same values over a wide dose region from 50 Gy to 30 kGy. An absorbed dose of 1.3-1.4 kGy results in a flux loss of about 50%. Re ... -
Engineering the diffusion behavior of dopants (B,Sb) in silicon by incorporation of carbon
Tema Archive | 2002|or even suppress the undesirable diffusion of boron in silicon-based bipolar transistors. To understand this macroscopic behavior, processes ... -
Nano-structure and tribological properties of B+ and Ti + co-implanted silicon nitride
Tema Archive | 2005|-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion ... -
n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation
Tema Archive | 2004|) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer ... -
The ablation of polymers under excimer laser irradiation: The physics of the process and the polymer structure
Tema Archive | 2001|well documented phenomenon takes place at and above a given value of the pulse energy density (or fluence, in J/cm2), the ablation ... -
Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
Tema Archive | 2001|High depth resolution medium energy ion scattering (MEIS) in the double alignment mode is used to determine the pre- and post-annealing ... -
Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation
Tema Archive | 2002|It is well established that low energy B+ ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra ... -
Analysis of medieval glass by X-ray spectrometric methods
Tema Archive | 2000|performed by the methods of PIGE, XRF, electron probe microanalysis, and LA-ICP-MS. The PIXE data were evaluated statistically using the principal ... -
GIXRF-NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen
Tema Archive | 2010|GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of ... -
Variable lattice expansion in martensitic stainless steel after nitrogen ion implantation
Tema Archive | 2006|Similar to expanded austenite, expanded martensite could be formed in the surface region of martensitic stainless steel after energetic ... -
Density evolution in formation of swift heavy ion tracks in insulators
Tema Archive | 2010|Swift heavy ion irradiation leaves a latent ion track around the ion path in many materials. Here the authors report computational ... -
Chemical bonding in carbonitride nanolayers
Tema Archive | 2007|First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides ... -
Total pattern fitting for the combined size-strain-stress-texture determination in thin film diffraction
Tema Archive | 2010|requires the knowledge of the crystal structure for the phases present in the film, or if the amount/film thickness is sufficient, the crystal ... -
Advances in particle identification in AMS at low energies
Tema Archive | 2007|application in other fields of research where good energy resolution and particle identification is needed. ... -
Mechanisms of damage formation in semiconductors
Tema Archive | 2009|The damage accumulation in ion-implanted semiconductors is analysed using Rutherford backscattering spectrometry (RBS). When energetic ions ... -
Radiation damage evolution in ceramics
Tema Archive | 2009|A review is presented of recent results on radiation damage production, defect accumulation and dynamic annealing in a number of ceramics ...
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