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Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability
American Institute of Physics | 2022| -
A Q2Q1 integrated finite element method with the semi‐implicit consistent CSF for solving incompressible two‐phase flows with surface tension effect
Online Contents | 2016|Contributors: Yoo, Jung Yul -
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
Free accessDOAJ | 2022| -
Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 °C) microwave annealing for flexible electronics
American Institute of Physics | 2023| -
Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
Online Contents | 2014|Contributors: Jung, Hyunsoo -
Robust and scalable three-dimensional spacer textile pressure sensor for human motion detection
PaperIOP Institute of Physics | 2019| -
Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
American Institute of Physics | 2013| -
Oxygen plasma effects on the electrical conductance of single-walled carbon nanotube bundles
Online Contents | 2010|Contributors: Song, Jung-Hoon -
Enhancing the Therapeutic Potential of CCL2-Overexpressing Mesenchymal Stem Cells in Acute Stroke
Free accessDOAJ | 2020| -
Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg
National licenceAmerican Institute of Physics | 2009| -
Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate
National licenceAmerican Institute of Physics | 2011|
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