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Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
American Institute of Physics | 2014| -
Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure
National licenceAmerican Institute of Physics | 2013| -
Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation
National licenceAmerican Institute of Physics | 2013| -
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
National licenceAmerican Institute of Physics | 1998| -
Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si
National licenceAmerican Institute of Physics | 1999| -
Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si
National licenceAmerican Institute of Physics | 1998| -
Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si
National licenceAmerican Institute of Physics | 2000| -
Recombination enhanced defect annealing in n‐InP
National licenceAmerican Institute of Physics | 1984| -
Dominant iron gettering mechanism in p/p+ silicon wafers
National licenceAmerican Institute of Physics | 2000| -
Evolution from point to extended defects in ion implanted silicon
National licenceAmerican Institute of Physics | 1997| -
Carbon in silicon: Modeling of diffusion and clustering mechanisms
National licenceAmerican Institute of Physics | 2002| -
Hydrogen passivation of point defects in silicon
National licenceAmerican Institute of Physics | 1980| -
Measurement of defect profiles in reactive ion etched silicon
American Institute of Physics | 1992| -
Formation of extended defects in silicon by high energy implantation of B and P
National licenceAmerican Institute of Physics | 1996| -
Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si
National licenceAmerican Institute of Physics | 1992| -
The electrical and defect properties of erbium‐implanted silicon
National licenceAmerican Institute of Physics | 1991|
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