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Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates
American Institute of Physics | 2014| -
Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
National licenceAmerican Institute of Physics | 2012| -
In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy
National licenceAmerican Institute of Physics | 2011| -
Direct-indirect crossover in GaxIn1-xP alloys
National licenceAmerican Institute of Physics | 2011| -
Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy
National licenceAmerican Institute of Physics | 2010| -
Chemical structure of vanadium-based contact formation on n-AlN
National licenceAmerican Institute of Physics | 2010| -
Study of reaction of astrophysical interest via indirect reaction
American Institute of Physics | 2010| -
Modeling Fluorescence in Planetary Atmospheres with Partial Frequency Redistribution
American Institute of Physics | 2009| -
ε Indi Ba, Bb: a spectroscopic study of the nearest known brown dwarfs
American Institute of Physics | 2009| -
Effects of bismuth on wide-depletion-width GaInNAs solar cells
American Institute of Physics | 2008| -
Low temperature photoluminescence from dilute bismides
National licenceAmerican Institute of Physics | 2008| -
Intermixing and chemical structure at the interface between n-GaN and V-based contacts
National licenceAmerican Institute of Physics | 2008| -
Study of multi‐nucleon transfer reactions with light nuclei
American Institute of Physics | 2008|Contributors: Julin, R. -
γ‐ray Spectroscopy of Proton Drip‐Line Nuclei in the Region using SPIRAL beams
American Institute of Physics | 2008| -
Nuclear Structure far from stability at the Shell Closure
American Institute of Physics | 2008|Contributors: Julin, R. -
Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition
National licenceAmerican Institute of Physics | 2007|
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