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Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV (5 pages)
British Library Online Contents | 2012| -
Differential reflectance contrast technique in near field limit: Application to graphene
Free accessAmerican Institute of Physics | 2019| -
Real-time optical monitoring of semiconductor epitaxial growth
Free accessAmerican Institute of Physics | 2018| -
Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth
Free accessAmerican Institute of Physics | 2014| -
Micro reflectance difference techniques: Optical probes for surface exploration
British Library Online Contents | 2012| -
Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions
British Library Online Contents | 2008| -
Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring
British Library Online Contents | 2015| -
Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy
British Library Online Contents | 2016| -
A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution
National licenceAmerican Institute of Physics | 2012| -
Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs [6422-52]
British Library Conference Proceedings | 2007| -
Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)
Online Contents | 2017|Contributors: Ortega-Gallegos, J -
Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)
Online Contents | 2016|Contributors: Ortega-Gallegos, J -
Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring
Online Contents | 2015|Contributors: Ortega-Gallegos, J -
Inside Back Cover: Micro reflectance difference techniques: Optical probes for surface exploration (Phys. Status Solidi B 6/2012)
Online Contents | 2012|Contributors: Ortega‐Gallegos, J. -
Micro reflectance difference techniques: Optical probes for surface exploration
Online Contents | 2012|Contributors: Ortega‐Gallegos, J. -
Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
Online Contents | 2012|Contributors: Ortega-Gallegos, J. -
A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution
Online Contents | 2012|Contributors: Ortega-Gallegos, J.
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