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Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles
British Library Online Contents | 2008| -
X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films
British Library Online Contents | 2013| -
Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)
Free accessAmerican Institute of Physics | 2015| -
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
British Library Online Contents | 2012| -
Study of SiN~x:H~y passivant layers for AlGaN/GaN high electron mobility transistors
British Library Conference Proceedings | 2008| -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
National licenceAmerican Institute of Physics | 2008| -
Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AIInN
British Library Online Contents | 2010| -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content (3 pages)
British Library Online Contents | 2008| -
Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes
British Library Online Contents | 2010| -
High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods
British Library Online Contents | 2009| -
Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers
National licenceAmerican Institute of Physics | 2009| -
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
British Library Online Contents | 2008|
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