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Synonyms were used for: Feldeffekt
Search without synonyms: keywords:("Feldeffekt")
Used synonyms:
- field effect
-
√x circuit based on a novel, back-gate-using multiplier
IET | 1994|Keywords: field effect transistor circuits -
√x circuit based on a novel, back-gate-using multiplier
IET Digital Library Archive | 1994|Keywords: field effect transistor circuits -
$ MoS_{2} $ dual-gate transistors with electrostatically doped contacts
Online Contents | 2019|Keywords: field effect transistor -
$ SrTiO_{3} $ Based Side Gate Field Effect Transistor Realized by Submicron Scale AFM Induced Local Chemical Reactions
Online Contents | 2004|Keywords: field effect -
0.1 mu m AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal
Tema Archive | 1996|Keywords: millimetre wave field effect transistors -
0.1- mu m gate-length superconducting FET
Tema Archive | 1989|Keywords: SUPERCONDUCTING FIELD-EFFECT TRANSISTORS -
0.1 µm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
IET | 1999|Keywords: millimetre wave field effect transistors -
0.1 µm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
IET Digital Library Archive | 1999|Keywords: millimetre wave field effect transistors -
0.1 µm AlSb/InAs HEMTs with InAs subchannel
IET | 1998|Keywords: millimetre wave field effect transistors -
0.1 µm AlSb/InAs HEMTs with InAs subchannel
IET Digital Library Archive | 1998|Keywords: millimetre wave field effect transistors -
0.1 µm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
IET | 1999|Keywords: microwave field effect transistors -
0.1 µm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
IET Digital Library Archive | 1999|Keywords: microwave field effect transistors -
0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz
IET Digital Library Archive | 1988|Keywords: modulation-doped field-effect transistors -
0.1 µm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
IET | 1999|Keywords: microwave field effect transistors -
0.1 µm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
IET Digital Library Archive | 1999|Keywords: microwave field effect transistors -
0.2- mu m gate AlGaAs/GaAs HIGFET (heterostructure insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD
Tema Archive | 1991|Keywords: FIELD EFFECT INTEGRATED CIRCUITS -
0.2 µm AlSb/InAs HEMTs with 5 V gate breakdown voltage
IET | 1994|Keywords: microwave field effect transistors -
0.2 µm AlSb/InAs HEMTs with 5 V gate breakdown voltage
IET Digital Library Archive | 1994|Keywords: microwave field effect transistors -
0.2 µm gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft = 62 GHz
IET | 1996|Keywords: microwave field effect transistors, millimetre wave field effect transistors -
0.2 µm gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft = 62 GHz
IET Digital Library Archive | 1996|Keywords: millimetre wave field effect transistors, microwave field effect transistors
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