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Simulation of electrical parameters of new design of SLHC silicon sensors for large radii
Online Contents | 2010| -
Study of edge effects in the breakdown process of p+ on n-bulk silicon diodes
Online Contents | 2000| -
Effects of Radiation and Cryogenic Temperatures on the Electromechanical Properties of Materials Used in Microsystems
British Library Conference Proceedings | 2013| -
Effects of High-Energy Neutrons on Advanced SOI MOSFETs
British Library Conference Proceedings | 2011| -
Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes
British Library Online Contents | 2011| -
Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation
National licenceAmerican Institute of Physics | 2012| -
Low resistivity substrates for the silicon microstrips sensors optimisation
British Library Online Contents | 2000| -
Total-Dose Effects Caused by High-Energy Neutrons and gamma -Rays in Multiple-Gate FETs
British Library Conference Proceedings | 2010| -
Total-Dose Effects Caused by High-Energy Neutrons and gamma -Rays in Multiple-Gate FETs
British Library Online Contents | 2010| -
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer
British Library Online Contents | 2011| -
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs
Tema Archive | 2012| -
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs
British Library Online Contents | 2012|
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