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Separation of interlayer resistance in multilayer MoS2 field-effect transistors
Online Contents | 2014| -
Self-heating Characteristics of Mo Electrodes and MoS2 FET Using IR Thermal Imaging Microscope
Springer Verlag | 2020| -
Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating
American Chemical Society | 2019| -
Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure
American Chemical Society | 2019| -
GATE DRIVING CIRCUIT AND DISPLAY DEVICE INCLUDING THE SAME
Free accessEuropean Patent Office | 2022| -
Gate driving circuit and display device including the same
Free accessEuropean Patent Office | 2023| -
Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model
American Chemical Society | 2011| -
Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating
National licenceRoyal Society of Chemistry | 2016| -
Resistive switching characteristics of polycrystalline SrTiO3 films
American Institute of Physics | 2014| -
Induction heating effect on the performance of flexible MoS2 field-effect transistors
American Institute of Physics | 2017| -
Photoconductance of aligned SnO2 nanowire field effect transistors
National licenceAmerican Institute of Physics | 2009| -
Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors
Tema Archive | 2014| -
Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping
American Chemical Society | 2017| -
Separation of interlayer resistance in multilayer MoS2 field-effect transistors
American Institute of Physics | 2014|
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